Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- RS Stock No.:
- 258-3757P
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£34.50
(exc. VAT)
£41.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 654 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 24 | £3.45 |
| 25 - 49 | £3.26 |
| 50 - 99 | £3.03 |
| 100 + | £2.80 |
*price indicative
- RS Stock No.:
- 258-3757P
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
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Package Type PG-TO263-7 | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density