Infineon IGBT Module, 4.7 A TO-263

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Subtotal 10 units (supplied on a continuous strip)*

£34.20

(exc. VAT)

£41.00

(inc. VAT)

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10 - 24£3.42
25 - 49£3.23
50 - 99£3.00
100 +£2.77

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Packaging Options:
RS Stock No.:
258-3757P
Mfr. Part No.:
IMBG120R350M1HXTMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

4.7A

Product Type

IGBT Module

Maximum Power Dissipation Pd

65W

Package Type

TO-263

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

Very low switching losses

Short-circuit withstand time, 3 μs

Fully controllable dV/dt

Efficiency improvement

Enabling higher frequency

Increased power density