Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247
- RS Stock No.:
- 253-3507P
- Mfr. Part No.:
- BIDW30N60T
- Brand:
- Bourns
Subtotal 2 units (supplied in a tube)*
£4.43
(exc. VAT)
£5.316
(inc. VAT)
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In Stock
- Plus 1,748 unit(s) shipping from 06 October 2025
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Units | Per unit |
|---|---|
| 2 + | £2.215 |
*price indicative
- RS Stock No.:
- 253-3507P
- Mfr. Part No.:
- BIDW30N60T
- Brand:
- Bourns
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Bourns | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 230 W | |
| Configuration | Single Diode | |
| Package Type | TO-247 | |
Select all | ||
|---|---|---|
Brand Bourns | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 230 W | ||
Configuration Single Diode | ||
Package Type TO-247 | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).
600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant