Infineon FF750R17ME7DB11BPSA1 IGBT Module, 750 A 1700 V
- RS Stock No.:
- 250-0225P
- Mfr. Part No.:
- FF750R17ME7DB11BPSA1
- Brand:
- Infineon
Save 4% when you buy 3 units
Subtotal 2 units (supplied in a tray)*
£394.70
(exc. VAT)
£473.64
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 7 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 2 - 2 | £197.35 |
| 3 + | £189.04 |
*price indicative
- RS Stock No.:
- 250-0225P
- Mfr. Part No.:
- FF750R17ME7DB11BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 750 A | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 20 mW | |
| Number of Transistors | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 750 A | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 20 mW | ||
Number of Transistors 2 | ||
The Infineon EconoDUAL™ 3 1700 V, 750 A dual TRENCHSTOP™ IGBT7 module with enlarged emitter controlled 7 diode, NTC and PressFIT contact technology.
Integrated temperature sensor
High current density
Low VCE, sat
Overload operation up to 175°C
TRENCHSTOPTM IGBT7
VCE, sat with positive temperature coefficient
Enlarged diode for regenerative operation
High power density
Isolated base plate
PressFIT contact technology
Standard housing
High current density
Low VCE, sat
Overload operation up to 175°C
TRENCHSTOPTM IGBT7
VCE, sat with positive temperature coefficient
Enlarged diode for regenerative operation
High power density
Isolated base plate
PressFIT contact technology
Standard housing