STMicroelectronics STGYA50M120DF3 Single IGBT, 100 A 1200 V Max247
- RS Stock No.:
- 248-4896P
- Mfr. Part No.:
- STGYA50M120DF3
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 5 units (supplied in a tube)*
£30.15
(exc. VAT)
£36.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 56 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
5 - 9 | £6.03 |
10 - 24 | £5.42 |
25 - 49 | £4.88 |
50 + | £4.68 |
*price indicative
- RS Stock No.:
- 248-4896P
- Mfr. Part No.:
- STGYA50M120DF3
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 100 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | 20V | |
Number of Transistors | 1 | |
Maximum Power Dissipation | 535 W | |
Package Type | Max247 | |
Configuration | Single | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 535 W | ||
Package Type Max247 | ||
Configuration Single | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Maximum junction temperature of 175 degree C
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode