Infineon DF200R07W2H3B77BPSA1 IGBT Module, 40 A, 70 A 650 V
- RS Stock No.:
- 248-1196P
- Mfr. Part No.:
- DF200R07W2H3B77BPSA1
- Brand:
- Infineon
Subtotal 1 unit (supplied in a tray)*
£33.02
(exc. VAT)
£39.62
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 6 unit(s) shipping from 27 October 2025
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Units | Per unit |
|---|---|
| 1 + | £33.02 |
*price indicative
- RS Stock No.:
- 248-1196P
- Mfr. Part No.:
- DF200R07W2H3B77BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 40 A, 70 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 20 mW | |
| Number of Transistors | 4 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 40 A, 70 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 20 mW | ||
Number of Transistors 4 | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device has Booster configuration and uses IGBT HighSpeed 3 technology.
Best cost-performance ratio with reduced system costs
High degree of freedom in design
Highest efficiency and power density
High degree of freedom in design
Highest efficiency and power density