onsemi NXH80T120L3Q0S3G IGBT Module, 75 A 1200 V Q0PACK - Case 180AB (Pb-Free and Halide-Free)
- RS Stock No.:
- 245-6993P
- Mfr. Part No.:
- NXH80T120L3Q0S3G
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied in a tray)*
£445.30
(exc. VAT)
£534.40
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 30 unit(s), ready to ship
Units | Per unit |
---|---|
10 + | £44.53 |
*price indicative
- RS Stock No.:
- 245-6993P
- Mfr. Part No.:
- NXH80T120L3Q0S3G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Maximum Continuous Collector Current | 75 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 188 W | |
Number of Transistors | 4 | |
Package Type | Q0PACK - Case 180AB (Pb-Free and Halide-Free) | |
Select all | ||
---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 188 W | ||
Number of Transistors 4 | ||
Package Type Q0PACK - Case 180AB (Pb-Free and Halide-Free) | ||
The ON Semiconductor Q0PACK Module is a power module containing a T type neutral point clamped three level inverter stage. The integrated field stop trench IGBTs and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
Low Switching Loss
Low VCESAT
Compact 65.9 mm x 32.5 mm x 12 mm Package
Options with Pre applied Thermal Interface Material and without Pre applied TIM
Options with Solderable Pins and Press fit Pins thermistor
Low VCESAT
Compact 65.9 mm x 32.5 mm x 12 mm Package
Options with Pre applied Thermal Interface Material and without Pre applied TIM
Options with Solderable Pins and Press fit Pins thermistor