onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

Subtotal (1 tray of 24 units)*

£1,667.616

(exc. VAT)

£2,001.144

(inc. VAT)

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Units
Per unit
Per Tray*
24 +£69.484£1,667.62

*price indicative

RS Stock No.:
245-6990
Mfr. Part No.:
NXH80B120MNQ0SNG
Brand:
onsemi
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Brand

onsemi

Maximum Power Dissipation

69 W

Number of Transistors

2

Package Type

Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC


The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V 80 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant