onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins
- RS Stock No.:
- 245-6961
- Mfr. Part No.:
- NXH100B120H3Q0PG
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 245-6961
- Mfr. Part No.:
- NXH100B120H3Q0PG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 61 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 186 W | |
| Number of Transistors | 2 | |
| Package Type | Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 61 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 186 W | ||
Number of Transistors 2 | ||
Package Type Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins | ||
The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with Pre applied thermal interface Material and without pre applied TIM
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with Pre applied thermal interface Material and without pre applied TIM