Infineon FS200R06KE3BOSA1 IGBT Module, 200 A 600 V EconoPACK
- RS Stock No.:
- 244-5866P
- Mfr. Part No.:
- FS200R06KE3BOSA1
- Brand:
- Infineon
Subtotal 1 unit (supplied in a tray)*
£98.72
(exc. VAT)
£118.46
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 7 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £98.72 |
*price indicative
- RS Stock No.:
- 244-5866P
- Mfr. Part No.:
- FS200R06KE3BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation | 600 W | |
| Package Type | EconoPACK | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation 600 W | ||
Package Type EconoPACK | ||
The infineon IGBT module the maximum rated collector emitter voltage is 600 V and toatal power dissipation is 600 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 1.90 V
Gate-emitter leakage current 400 nA
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 1.90 V
Gate-emitter leakage current 400 nA