Infineon FP75R12KT4BOSA1 IGBT Module, 75 A 1200 V EconoPIM
- RS Stock No.:
- 244-5851
- Mfr. Part No.:
- FP75R12KT4BOSA1
- Brand:
- Infineon
Subtotal (1 tray of 10 units)*
£1,033.19
(exc. VAT)
£1,239.83
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 15 October 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 10 + | £103.319 | £1,033.19 |
*price indicative
- RS Stock No.:
- 244-5851
- Mfr. Part No.:
- FP75R12KT4BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 7 | |
| Package Type | EconoPIM | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 7 | ||
Package Type EconoPIM | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 355 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA