Infineon FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V
- RS Stock No.:
- 244-5848P
- Mfr. Part No.:
- FP75R12KT4B11BOSA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 244-5848P
- Mfr. Part No.:
- FP75R12KT4B11BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 385 W | |
| Number of Transistors | 7 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 385 W | ||
Number of Transistors 7 | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.
Electrical Features
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing