Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V
- RS Stock No.:
- 244-5835P
- Mfr. Part No.:
- FP50R12KE3BOSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 2 units (supplied in a tray)*
£189.64
(exc. VAT)
£227.56
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 10 unit(s) shipping from 04 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 2 - 4 | £94.82 |
| 5 + | £85.34 |
*price indicative
- RS Stock No.:
- 244-5835P
- Mfr. Part No.:
- FP50R12KE3BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 280 W | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 280 W | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA