Infineon FS150R12KT4B11BOSA1 IGBT Module, 150 A 1200 V
- RS Stock No.:
- 244-5408P
- Mfr. Part No.:
- FS150R12KT4B11BOSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 2 units (supplied in a tray)*
£266.52
(exc. VAT)
£319.82
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 10 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 2 - 2 | £133.26 |
| 3 + | £119.94 |
*price indicative
- RS Stock No.:
- 244-5408P
- Mfr. Part No.:
- FS150R12KT4B11BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Maximum Power Dissipation | 750 W | |
| Number of Transistors | 6 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Maximum Power Dissipation 750 W | ||
Number of Transistors 6 | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.10 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.35 nF
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.35 nF