Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V
- RS Stock No.:
- 244-5404P
- Mfr. Part No.:
- FS150R12KT3BOSA1
- Brand:
- Infineon
Save 9% when you buy 3 units
Subtotal 2 units (supplied in a tray)*
£330.04
(exc. VAT)
£396.04
(inc. VAT)
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- 7 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 2 - 2 | £165.02 |
| 3 + | £148.52 |
*price indicative
- RS Stock No.:
- 244-5404P
- Mfr. Part No.:
- FS150R12KT3BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation | 700 W | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation 700 W | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.15 V, gate threshold voltage is 6.5 V.
Collector-emitter cut-off current 5.0 mA
Temperature under switching conditions 125° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.40 nF
Temperature under switching conditions 125° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.40 nF