Infineon FP30R06W1E3BOMA1 IGBT Module, 37 A 600 V
- RS Stock No.:
- 244-5396P
- Mfr. Part No.:
- FP30R06W1E3BOMA1
- Brand:
- Infineon
Save 10% when you buy 10 units
Subtotal 2 units (supplied in a tray)*
£67.36
(exc. VAT)
£80.84
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 47 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 2 - 4 | £33.68 |
| 5 - 9 | £30.32 |
| 10 + | £30.14 |
*price indicative
- RS Stock No.:
- 244-5396P
- Mfr. Part No.:
- FP30R06W1E3BOMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 37 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 115 W | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 37 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 115 W | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.
Electrical features
Low switching losses
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
Low switching losses
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps