Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V
- RS Stock No.:
- 244-5380P
- Mfr. Part No.:
- FP100R12KT4BOSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 2 units (supplied in a tray)*
£336.60
(exc. VAT)
£403.92
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 13 October 2026
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Units | Per unit |
|---|---|
| 2 - 2 | £168.30 |
| 3 + | £151.48 |
*price indicative
- RS Stock No.:
- 244-5380P
- Mfr. Part No.:
- FP100R12KT4BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 515 W | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 515 W | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 200 A and collector-emitter saturation voltag 2.20 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.27 nF
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.27 nF