Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

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Subtotal 10 units (supplied in a tube)*

£11.50

(exc. VAT)

£13.80

(inc. VAT)

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Units
Per unit
10 - 98£1.15
100 - 248£1.095
250 - 498£1.04
500 +£0.995

*price indicative

Packaging Options:
RS Stock No.:
242-0978P
Mfr. Part No.:
IGP20N65H5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

1

Maximum Power Dissipation

125 W

Package Type

TO-220-3

Configuration

Single

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters