Infineon IGP15N60TXKSA1 Single IGBT, 26 A 600 V TO-220-3
- RS Stock No.:
- 242-0975
- Mfr. Part No.:
- IGP15N60TXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 500 units)*
£406.00
(exc. VAT)
£487.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 March 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 500 - 500 | £0.812 | £406.00 |
| 1000 + | £0.772 | £386.00 |
*price indicative
- RS Stock No.:
- 242-0975
- Mfr. Part No.:
- IGP15N60TXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 26 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 130 W | |
| Number of Transistors | 1 | |
| Configuration | Single | |
| Package Type | TO-220-3 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 26 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 130 W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type TO-220-3 | ||
The Infineon 600 V, 15 A IGBTs transistor has maximum continous collector current is 26 A.The maximum junction temperature is 175°C. It has highest efficiency,low conduction and switching losses,comprehensive portfolio in 600 V and 1200 V for flexibility of design and high device reliability.
Very soft, fast recovery anti-parallel emitter controlled diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution