onsemi FGH4L40T120LQD IGBT, 80 A 1200 V TO-247
- RS Stock No.:
- 241-0723
- Mfr. Part No.:
- FGH4L40T120LQD
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 241-0723
- Mfr. Part No.:
- FGH4L40T120LQD
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 153 W | |
| Number of Transistors | 30 | |
| Package Type | TO-247 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 153 W | ||
Number of Transistors 30 | ||
Package Type TO-247 | ||
The ON Semiconductor 1200 V, 40 A ultra field stop IGBT. This IGBT uses a fast switching co-packed diode making it ideal for use in hard-switching applications where EON, IRRM and trr are important factors determining the losses. Ultra Field Stop IGBTs offers excellent switching losses for low conduction loss devices.
Low VCE(SAT) 1.55V at 40A
EON 1.04mJ at 600V/40A
EOFF 1.35mJ at 600V/40A
IRRM 41.3A at 175C 1A/ns 40A
EON 1.04mJ at 600V/40A
EOFF 1.35mJ at 600V/40A
IRRM 41.3A at 175C 1A/ns 40A