Infineon IKWH30N65WR6XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- RS Stock No.:
- 232-6738P
- Mfr. Part No.:
- IKWH30N65WR6XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied in a tube)*
£41.60
(exc. VAT)
£50.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 150 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
20 - 48 | £2.08 |
50 - 98 | £1.94 |
100 - 198 | £1.80 |
200 + | £1.665 |
*price indicative
- RS Stock No.:
- 232-6738P
- Mfr. Part No.:
- IKWH30N65WR6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 30 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | ±20V | |
Number of Transistors | 1 | |
Maximum Power Dissipation | 83 W | |
Configuration | Single | |
Package Type | TO-247-3-HCC | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 83 W | ||
Configuration Single | ||
Package Type TO-247-3-HCC | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The Infineon's 30 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
Lowest switching losses
Improved reliability against package contamination