Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- RS Stock No.:
- 232-6735
- Mfr. Part No.:
- IKWH30N65WR5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£49.80
(exc. VAT)
£59.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 120 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 - 30 | £1.66 | £49.80 |
60 - 120 | £1.577 | £47.31 |
150 - 270 | £1.511 | £45.33 |
300 - 570 | £1.444 | £43.32 |
600 + | £1.378 | £41.34 |
*price indicative
- RS Stock No.:
- 232-6735
- Mfr. Part No.:
- IKWH30N65WR5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 30 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | ±20V | |
Number of Transistors | 1 | |
Maximum Power Dissipation | 95 W | |
Configuration | Single | |
Package Type | TO-247-3-HCC | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 95 W | ||
Configuration Single | ||
Package Type TO-247-3-HCC | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The Infineon's 30 A reverse conducting TRENCHSTOP 5 WR5 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC stage in RAC / CAC and DC/DC in Welding application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for price sensitive customers. WR5 IGBT in TO-247-3-HCC also enable more reliable design with the increased clearance and creep age distances.
Monolithically integrated diode
Stable temperature behaviour
Improved reliability against package contamination
Stable temperature behaviour
Improved reliability against package contamination