Infineon IGD06N60TATMA1 Single IGBT, 12 A 600 V, 3-Pin PG-TO252
- RS Stock No.:
- 226-6074P
- Mfr. Part No.:
- IGD06N60TATMA1
- Brand:
- Infineon
Subtotal 15 units (supplied on a continuous strip)*
£5.385
(exc. VAT)
£6.465
(inc. VAT)
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- 1,860 unit(s) ready to ship
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Units | Per unit |
---|---|
15 + | £0.359 |
*price indicative
- RS Stock No.:
- 226-6074P
- Mfr. Part No.:
- IGD06N60TATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 12 A | |
Maximum Collector Emitter Voltage | 600 V | |
Maximum Gate Emitter Voltage | 20V | |
Number of Transistors | 1 | |
Maximum Power Dissipation | 88 W | |
Configuration | Single | |
Package Type | PG-TO252 | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 12 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 88 W | ||
Configuration Single | ||
Package Type PG-TO252 | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The Infineon IGD06N60T is very soft, fast recovery anti-parallel emitter controlled diode and has high ruggedness, temperature stable behaviour. It has low switching loss.
Very low VCE(sat) 1.5 V (typ.)
Maximum junction temperature 175°C
Short circuit withstand time 5microsecond
Maximum junction temperature 175°C
Short circuit withstand time 5microsecond