Infineon IHW50N65R6XKSA1 IGBT, 83 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 225-0576P
- Mfr. Part No.:
- IHW50N65R6XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied in a tube)*
£48.40
(exc. VAT)
£58.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 136 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | £2.42 |
| 50 - 98 | £2.26 |
| 100 - 198 | £2.10 |
| 200 + | £1.965 |
*price indicative
- RS Stock No.:
- 225-0576P
- Mfr. Part No.:
- IHW50N65R6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 83 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 251 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 83 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 251 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C