Infineon IHW40N65R6XKSA1 IGBT 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 225-0574P
- Mfr. Part No.:
- IHW40N65R6XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£54.00
(exc. VAT)
£64.75
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 35 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £2.16 |
| 50 - 120 | £2.016 |
| 125 - 245 | £1.872 |
| 250 + | £1.728 |
*price indicative
- RS Stock No.:
- 225-0574P
- Mfr. Part No.:
- IHW40N65R6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 210 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 210 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon IHW40N65R6 is the 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C