Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 225-0572P
- Mfr. Part No.:
- IHW30N65R6XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£48.85
(exc. VAT)
£58.625
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 135 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £1.954 |
| 50 - 120 | £1.822 |
| 125 - 245 | £1.692 |
| 250 + | £1.584 |
*price indicative
- RS Stock No.:
- 225-0572P
- Mfr. Part No.:
- IHW30N65R6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 65 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 160 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 65 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 160 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
High ruggedness and stable temperature behaviour
Low EMI
Pb-free lead plating, RoHS compliant
Powerful monolithic reverse-conducting diode with low forward voltage
Low EMI
Pb-free lead plating, RoHS compliant
Powerful monolithic reverse-conducting diode with low forward voltage