Infineon IHW30N160R5XKSA1 IGBT, 30 A 1600 V, 3-Pin TO-247
- RS Stock No.:
- 218-4399P
- Mfr. Part No.:
- IHW30N160R5XKSA1
- Brand:
- Infineon
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Subtotal 10 units (supplied in a tube)*
£35.10
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£42.10
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In Stock
- 3,175 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 - 20 | £3.51 |
| 25 - 45 | £3.276 |
| 50 - 120 | £3.042 |
| 125 + | £2.848 |
*price indicative
- RS Stock No.:
- 218-4399P
- Mfr. Part No.:
- IHW30N160R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 1600 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 263 W | |
| Package Type | TO-247 | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.3 x 21.5 x 5.3mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 1500pF | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 1600 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 263 W | ||
Package Type TO-247 | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.3 x 21.5 x 5.3mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 1500pF | ||
Infineon IGBT, 30A Maximum Continuous Collector Current, 1600V Maximum Collector Emitter Voltage - IHW30N160R5XKSA1
This IGBT is a robust semiconductor device designed for high voltage applications, featuring a maximum collector current of 30A and operating within a temperature range of -40°C to +175°C. The TO-247 package ensures convenient installation, while its dimensions of 16.3 x 21.5 x 5.3 mm provide a compact solution for various electronic needs.
Features & Benefits
• Reverse-conducting capability for enhanced performance
• Monolithic body diode reduces forward voltage loss
• Tight parameter distribution enhances reliability
• High ruggedness improves durability in demanding conditions
• Low EMI emissions ensure minimal interference in circuits
• Monolithic body diode reduces forward voltage loss
• Tight parameter distribution enhances reliability
• High ruggedness improves durability in demanding conditions
• Low EMI emissions ensure minimal interference in circuits
Applications
• Used for induction cooking
• Suitable for microwave oven circuitry
• Ideal for various high voltage switching
• Compatible with specialised semiconductor power modules
• Suitable for microwave oven circuitry
• Ideal for various high voltage switching
• Compatible with specialised semiconductor power modules
What are the key thermal characteristics of this device?
The thermal resistance from junction to ambient is 40 K/W, and the junction to case thermal resistance is 0.57 K/W, ensuring efficient heat management under load conditions.
How does this IGBT module handle high voltage applications?
It boasts a collector-emitter voltage rating of up to 1600V, making it suitable for high voltage environments while maintaining safe operation across specified limits.
What implications does the maximum power dissipation have for design?
With a maximum power dissipation of 263W, it allows for efficient energy management, ensuring that the device can operate effectively without thermal overload in typical applications.