Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263
- RS Stock No.:
- 218-4389
- Mfr. Part No.:
- IGB50N65H5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,390.00
(exc. VAT)
£1,670.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £1.39 | £1,390.00 |
*price indicative
- RS Stock No.:
- 218-4389
- Mfr. Part No.:
- IGB50N65H5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 270 W | |
| Package Type | TO-263 | |
| Channel Type | N | |
| Pin Count | 3 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 270 W | ||
Package Type TO-263 | ||
Channel Type N | ||
Pin Count 3 | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 80 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient