Infineon IKB40N65EF5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO263-3
- RS Stock No.:
- 215-6651P
- Mfr. Part No.:
- IKB40N65EF5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£32.00
(exc. VAT)
£38.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 976 unit(s) shipping from 24 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 18 | £3.20 |
| 20 - 48 | £2.98 |
| 50 - 98 | £2.77 |
| 100 + | £2.595 |
*price indicative
- RS Stock No.:
- 215-6651P
- Mfr. Part No.:
- IKB40N65EF5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 74 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 250 W | |
| Package Type | PG-TO263-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 74 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 250 W | ||
Package Type PG-TO263-3 | ||
Pin Count 3 | ||
The Infineon high speed fast switching insulated-gate bipolar transistor with full current rated rapid 1 fast and soft antiparallel diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference