Infineon, Type N-Channel IGBT Single Transistor IC, 30 A 650 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 215-6648P
- Mfr. Part No.:
- IKB15N65EH5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£47.95
(exc. VAT)
£57.55
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 920 unit(s) shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £1.918 |
| 50 - 120 | £1.79 |
| 125 - 245 | £1.662 |
| 250 + | £1.534 |
*price indicative
- RS Stock No.:
- 215-6648P
- Mfr. Part No.:
- IKB15N65EH5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 105W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 105W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference