Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3
- RS Stock No.:
- 215-6648P
- Mfr. Part No.:
- IKB15N65EH5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£61.45
(exc. VAT)
£73.75
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 920 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £2.458 |
| 50 - 120 | £2.294 |
| 125 - 245 | £2.13 |
| 250 + | £1.966 |
*price indicative
- RS Stock No.:
- 215-6648P
- Mfr. Part No.:
- IKB15N65EH5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 105 W | |
| Package Type | PG-TO263-3 | |
| Pin Count | 3 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 105 W | ||
Package Type PG-TO263-3 | ||
Pin Count 3 | ||
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference