Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6646P
- Mfr. Part No.:
- IHW50N65R5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied in a tube)*
£49.00
(exc. VAT)
£58.80
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- Plus 2 left, shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | £2.45 |
| 50 - 98 | £2.285 |
| 100 - 198 | £2.12 |
| 200 + | £1.36 |
*price indicative
- RS Stock No.:
- 215-6646P
- Mfr. Part No.:
- IHW50N65R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 282 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 282 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference