Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6641P
- Mfr. Part No.:
- IHW40N120R5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied in a tube)*
£60.10
(exc. VAT)
£72.12
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,174 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | £3.005 |
| 50 - 98 | £2.805 |
| 100 - 198 | £2.605 |
| 200 + | £2.405 |
*price indicative
- RS Stock No.:
- 215-6641P
- Mfr. Part No.:
- IHW40N120R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±25 V | |
| Maximum Power Dissipation | 394 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20 V, ±25 V | ||
Maximum Power Dissipation 394 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon insulated-gate bipolar transistor with powerful monolithic body diode with low forward voltage designed for soft commutation.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference