Infineon IHW20N135R5XKSA1 IGBT, 40 A 1350 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6636P
- Mfr. Part No.:
- IHW20N135R5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£68.50
(exc. VAT)
£82.25
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 10 unit(s) ready to ship
- Plus 240 unit(s) shipping from 27 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £2.74 |
| 50 - 120 | £2.556 |
| 125 - 245 | £2.404 |
| 250 + | £2.222 |
*price indicative
- RS Stock No.:
- 215-6636P
- Mfr. Part No.:
- IHW20N135R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 1350 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±25 V | |
| Maximum Power Dissipation | 310 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 1350 V | ||
Maximum Gate Emitter Voltage ±20 V, ±25 V | ||
Maximum Power Dissipation 310 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference