Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3
- RS Stock No.:
- 215-6630P
- Mfr. Part No.:
- IGB50N60TATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£29.75
(exc. VAT)
£35.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,854 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 98 | £2.975 |
| 100 - 248 | £2.75 |
| 250 - 498 | £2.56 |
| 500 + | £2.475 |
*price indicative
- RS Stock No.:
- 215-6630P
- Mfr. Part No.:
- IGB50N60TATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 90 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 333 W | |
| Package Type | PG-TO263-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 90 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 333 W | ||
Package Type PG-TO263-3 | ||
Pin Count 3 | ||
The Infineon low loss insulated-gate bipolar transistor in trenchstop and fieldstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference