Infineon, Type N-Channel IGBT Single Transistor IC, 90 A 600 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 215-6630P
- Mfr. Part No.:
- IGB50N60TATMA1
- Brand:
- Infineon
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Subtotal 10 units (supplied on a continuous strip)*
£28.95
(exc. VAT)
£34.74
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 3,852 unit(s) shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 98 | £2.895 |
| 100 - 248 | £2.675 |
| 250 - 498 | £2.49 |
| 500 + | £2.41 |
*price indicative
- RS Stock No.:
- 215-6630P
- Mfr. Part No.:
- IGB50N60TATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 90A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 333W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | TRENCHSTOPTM | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 90A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 333W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series TRENCHSTOPTM | ||
Standards/Approvals RoHS, JEDEC1 | ||
Automotive Standard No | ||
The Infineon low loss insulated-gate bipolar transistor in trenchstop and fieldstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference