Infineon AIGW40N65H5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6609P
- Mfr. Part No.:
- AIGW40N65H5XKSA1
- Brand:
- Infineon
Subtotal 2 units (supplied in a tube)*
£4.65
(exc. VAT)
£5.58
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 184 unit(s) ready to ship
- Plus 999,999,814 unit(s) shipping from 27 February 2026
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Units | Per unit |
---|---|
2 + | £2.325 |
*price indicative
- RS Stock No.:
- 215-6609P
- Mfr. Part No.:
- AIGW40N65H5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 74 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
Maximum Power Dissipation | 250 W | |
Package Type | PG-TO247-3 | |
Pin Count | 3 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 74 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 250 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon high speed H5 technology insulated-gate bipolar transistor offering best-in-class efficiency in hard switching and resonant topologies.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference