STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247
- RS Stock No.:
- 206-8630P
- Mfr. Part No.:
- STGWA30IH65DF
- Brand:
- STMicroelectronics
Currently unavailable
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- RS Stock No.:
- 206-8630P
- Mfr. Part No.:
- STGWA30IH65DF
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 108 W | |
| Package Type | TO-247 | |
| Pin Count | 4 | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 108 W | ||
Package Type TO-247 | ||
Pin Count 4 | ||
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Designed for soft commutation only
Maximum junction temperature: TJ = 175 °C
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive VCE(sat) temperature coefficient
Maximum junction temperature: TJ = 175 °C
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive VCE(sat) temperature coefficient