STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263)
- RS Stock No.:
- 204-9869
- Mfr. Part No.:
- STGB50H65FB2
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 204-9869
- Mfr. Part No.:
- STGB50H65FB2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 86 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 272 W | |
| Number of Transistors | 1 | |
| Package Type | D2PAK (TO-263) | |
| Pin Count | 3 | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 86 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 272 W | ||
Number of Transistors 1 | ||
Package Type D2PAK (TO-263) | ||
Pin Count 3 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
Minimized tail current
Tight parameter distribution
Low thermal resistance