STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

£10.61

(exc. VAT)

£12.73

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 24 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45£2.122£10.61
50 - 95£1.99£9.95
100 - 245£1.594£7.97
250 - 495£1.328£6.64
500 +£1.168£5.84

*price indicative

Packaging Options:
RS Stock No.:
204-9868
Mfr. Part No.:
STGB30H65DFB2
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

167 W

Package Type

D2PAK (TO-263)

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution