onsemi NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount
- RS Stock No.:
- 195-8769P
- Mfr. Part No.:
- NXH100B120H3Q0PTG
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied in a tray)*
£298.40
(exc. VAT)
£358.10
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 6 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 + | £29.84 |
*price indicative
- RS Stock No.:
- 195-8769P
- Mfr. Part No.:
- NXH100B120H3Q0PTG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 186 W | |
| Package Type | Q0BOOST | |
| Configuration | Dual | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 22 | |
| Transistor Configuration | Dual | |
| Dimensions | 66.2 x 32.8 x 11.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 186 W | ||
Package Type Q0BOOST | ||
Configuration Dual | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 22 | ||
Transistor Configuration Dual | ||
Dimensions 66.2 x 32.8 x 11.9mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage