onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount
- RS Stock No.:
- 185-8642P
- Mfr. Part No.:
- AFGB40T65SQDN
- Brand:
- onsemi
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£57.50
(exc. VAT)
£69.00
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- Plus 3,152 left, shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 198 | £2.875 |
| 200 + | £2.495 |
*price indicative
- RS Stock No.:
- 185-8642P
- Mfr. Part No.:
- AFGB40T65SQDN
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 238 W | |
| Number of Transistors | 1 | |
| Package Type | D2PAK | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.67 x 9.65 x 4.58mm | |
| Automotive Standard | AEC-Q101 | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 22.3mJ | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 2495pF | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 238 W | ||
Number of Transistors 1 | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.67 x 9.65 x 4.58mm | ||
Automotive Standard AEC-Q101 | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 22.3mJ | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 2495pF | ||
Non Compliant
- COO (Country of Origin):
- CN
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.
VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV