onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 181-1929P
- Mfr. Part No.:
- FGH75T65SQDNL4
- Brand:
- onsemi
Currently unavailable
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- RS Stock No.:
- 181-1929P
- Mfr. Part No.:
- FGH75T65SQDNL4
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 375 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.8 x 5.2 x 22.74mm | |
| Energy Rating | 160mJ | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 5100pF | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 375 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5.2 x 22.74mm | ||
Energy Rating 160mJ | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 5100pF | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO-247-4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb-Free Devices
Solar Inverter
Uninterruptible Power Inverter Supplies
Neutral Point Clamp Topology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO-247-4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb-Free Devices
Solar Inverter
Uninterruptible Power Inverter Supplies
Neutral Point Clamp Topology