onsemi FGH75T65SHDTL4 IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 181-1889P
- Mfr. Part No.:
- FGH75T65SHDTL4
- Brand:
- onsemi
Subtotal 1 unit (supplied in a tube)*
£2.02
(exc. VAT)
£2.42
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 424 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1 + | £2.02 |
*price indicative
- RS Stock No.:
- 181-1889P
- Mfr. Part No.:
- FGH75T65SHDTL4
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 455 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.8 x 5.2 x 22.74mm | |
| Energy Rating | 160mJ | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 3710pF | |
| Maximum Operating Temperature | +175 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 455 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5.2 x 22.74mm | ||
Energy Rating 160mJ | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 3710pF | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- CN
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution