onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
- RS Stock No.:
- 178-4627P
- Mfr. Part No.:
- FGH60T65SQD-F155
- Brand:
- onsemi
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Subtotal 20 units (supplied in a tube)*
£68.60
(exc. VAT)
£82.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 434 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 20 + | £3.43 |
*price indicative
- RS Stock No.:
- 178-4627P
- Mfr. Part No.:
- FGH60T65SQD-F155
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 333 W | |
| Package Type | TO-247 G03 | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.87 x 4.82 x 20.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 50mJ | |
| Gate Capacitance | 3813pF | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 333 W | ||
Package Type TO-247 G03 | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.87 x 4.82 x 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 50mJ | ||
Gate Capacitance 3813pF | ||