ROHM RGT16NS65DGC9, P-Channel IGBT, 16 A 650 V, 3+Tab-Pin I2PAK, Through Hole
- RS Stock No.:
- 171-5506
- Mfr. Part No.:
- RGT16NS65DGC9
- Brand:
- ROHM
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 171-5506
- Mfr. Part No.:
- RGT16NS65DGC9
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Maximum Continuous Collector Current | 16 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 30V | |
| Maximum Power Dissipation | 94 W | |
| Number of Transistors | 1 | |
| Package Type | TO-262 | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 3+Tab | |
| Transistor Configuration | Single | |
| Dimensions | 10.1 x 4.5 x 9mm | |
| Minimum Operating Temperature | -40 °C | |
| Gate Capacitance | 450pF | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Maximum Continuous Collector Current 16 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 30V | ||
Maximum Power Dissipation 94 W | ||
Number of Transistors 1 | ||
Package Type TO-262 | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 3+Tab | ||
Transistor Configuration Single | ||
Dimensions 10.1 x 4.5 x 9mm | ||
Minimum Operating Temperature -40 °C | ||
Gate Capacitance 450pF | ||
Maximum Operating Temperature +175 °C | ||
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating