Fuji Electric 6MBI100U4B-120-50, M633 , N-Channel 3 Phase Bridge IGBT Module, 100 A max, 1200 V, PCB Mount

Discontinued
RS Stock No.:
168-4548
Mfr. Part No.:
6MBI100U4B-120-50
Brand:
Fuji Electric
Find similar products by selecting one or more attributes.
Select all

Brand

Fuji Electric

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

520 W

Configuration

3 Phase Bridge

Package Type

M633

Mounting Type

PCB Mount

Channel Type

N

Pin Count

35

Transistor Configuration

3 Phase

Dimensions

122 x 62 x 17mm

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
JP

IGBT Modules 6-Pack, Fuji Electric


V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

Note

Maximum collector current (Ic) values are stated per transistor within the module.


IGBT Discretes & Modules, Fuji Electric


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.