IXYS MUBW15-12A6K 3 Phase Bridge IGBT Module, 19 A 1200 V, 25-Pin, PCB Mount
- RS Stock No.:
- 168-4499
- Mfr. Part No.:
- MUBW15-12A6K
- Brand:
- IXYS
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 168-4499
- Mfr. Part No.:
- MUBW15-12A6K
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 19 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Configuration | 3 Phase Bridge | |
| Mounting Type | PCB Mount | |
| Channel Type | N | |
| Pin Count | 25 | |
| Transistor Configuration | 3 Phase | |
| Dimensions | 82 x 37.4 x 17.1mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +125 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 19 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Configuration 3 Phase Bridge | ||
Mounting Type PCB Mount | ||
Channel Type N | ||
Pin Count 25 | ||
Transistor Configuration 3 Phase | ||
Dimensions 82 x 37.4 x 17.1mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +125 °C | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.