IXYS MDI75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount
- RS Stock No.:
- 168-4497
- Mfr. Part No.:
- MDI75-12A3
- Brand:
- IXYS
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 168-4497
- Mfr. Part No.:
- MDI75-12A3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | IXYS | |
Maximum Continuous Collector Current | 90 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Package Type | Y4 M5 | |
Configuration | Single | |
Mounting Type | Panel Mount | |
Channel Type | N | |
Pin Count | 7 | |
Transistor Configuration | Single | |
Dimensions | 94 x 34 x 30mm | |
Minimum Operating Temperature | -40 °C | |
Maximum Operating Temperature | +150 °C | |
Select all | ||
---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 90 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type Y4 M5 | ||
Configuration Single | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Transistor Configuration Single | ||
Dimensions 94 x 34 x 30mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.