Littelfuse MG12300D-BN2MM, 62MM Module , N-Channel Series IGBT Module, 480 A max, 1200 V, Panel Mount
- RS Stock No.:
- 165-9894
- Mfr. Part No.:
- MG12300D-BN2MM
- Brand:
- Littelfuse
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 165-9894
- Mfr. Part No.:
- MG12300D-BN2MM
- Brand:
- Littelfuse
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Littelfuse | |
| Maximum Continuous Collector Current | 480 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 1.45 kW | |
| Package Type | 62MM Module | |
| Configuration | Series | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 7 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Series | |
| Dimensions | 108 x 62 x 30.5mm | |
| Maximum Operating Temperature | +125 °C | |
| Minimum Operating Temperature | -40 °C | |
Select all | ||
|---|---|---|
Brand Littelfuse | ||
Maximum Continuous Collector Current 480 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 1.45 kW | ||
Package Type 62MM Module | ||
Configuration Series | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Switching Speed 1MHz | ||
Transistor Configuration Series | ||
Dimensions 108 x 62 x 30.5mm | ||
Maximum Operating Temperature +125 °C | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- CN
IGBT Modules, Littelfuse
Ultra low loss
High ruggedness
High short circuit capability
Positive temperature coefficient
Applications in Motor drives, Inverter, DC/DC Converter, SMPS and UPS
High ruggedness
High short circuit capability
Positive temperature coefficient
Applications in Motor drives, Inverter, DC/DC Converter, SMPS and UPS
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.