Vishay VS-GB75YF120UT Dual Half Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO2, PCB Mount
- RS Stock No.:
- 165-2735
- Mfr. Part No.:
- VS-GB75YF120UT
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 165-2735
- Mfr. Part No.:
- VS-GB75YF120UT
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 480 W | |
| Configuration | Dual Half Bridge | |
| Package Type | ECONO2 | |
| Mounting Type | PCB Mount | |
| Channel Type | N | |
| Pin Count | 35 | |
| Transistor Configuration | Dual Half Bridge | |
| Dimensions | 107.8 x 45.4 x 13.2mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 480 W | ||
Configuration Dual Half Bridge | ||
Package Type ECONO2 | ||
Mounting Type PCB Mount | ||
Channel Type N | ||
Pin Count 35 | ||
Transistor Configuration Dual Half Bridge | ||
Dimensions 107.8 x 45.4 x 13.2mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- IT
IGBT Modules, Vishay
Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.