STMicroelectronics STGD20N45LZAG IGBT, 25 A 475 V, 3-Pin DPAK, Surface Mount
- RS Stock No.:
- 164-7025P
- Mfr. Part No.:
- STGD20N45LZAG
- Brand:
- STMicroelectronics
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Subtotal 25 units (supplied on a continuous strip)*
£36.95
(exc. VAT)
£44.35
(inc. VAT)
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- Shipping from 02 February 2026
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Units | Per unit |
|---|---|
| 25 - 45 | £1.478 |
| 50 - 120 | £1.33 |
| 125 - 245 | £1.198 |
| 250 + | £1.136 |
*price indicative
- RS Stock No.:
- 164-7025P
- Mfr. Part No.:
- STGD20N45LZAG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 25 A | |
| Maximum Collector Emitter Voltage | 475 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Maximum Power Dissipation | 125 W | |
| Number of Transistors | 1 | |
| Package Type | DPAK | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 6.6 x 2.4 x 6.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 300mJ | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 1011pF | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 25 A | ||
Maximum Collector Emitter Voltage 475 V | ||
Maximum Gate Emitter Voltage 16V | ||
Maximum Power Dissipation 125 W | ||
Number of Transistors 1 | ||
Package Type DPAK | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 6.6 x 2.4 x 6.2mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 300mJ | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 1011pF | ||
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor